Featuring ON Semiconductor’s interline transfer CCD pixel design with a newly-developed electron multiplication output structure, the new KAE-02150 image sensor enables low-light video capture at 30 fps from sunlight to starlight for industrial applications. The 2/3” 2.1 MPixel CCD sensor features a 5.5 µm x 5.5 µm pixel size and a flexible readout architecture that enables use of 1, 2, or 4 outputs. In addition, the KAE-02150 sensor deploys an innovative output circuit design that enables high-dynamic range imaging by allowing either conventional CCD (low-gain) or EMCCD (high-gain) outputs to be utilized on a pixel-by-pixel basis within the same image. The KAE-02150 global shutter sensor is suitable for use in such applications as surveillance, defense/military, scientific and medical imaging, and intelligent transportation systems.
To Learn More:
Contact: ON Semiconductor
Headquarters: Phoenix, AZ, USA
Product: KAE-02150 CCD sensor
Key Features: 2/3" 2.1 MPixel CCD, 5.5 µm x 5.5 µm pixel size, 30 fps frame rate, CCD or EMCCD output on pixel-by-pixel basis.
What ON Semiconductor says:
View more information on the KAE-02150 image sensor.
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Former VSD Editor James Carroll joined the team 2013. Carroll covered machine vision and imaging from numerous angles, including application stories, industry news, market updates, and new products. In addition to writing and editing articles, Carroll managed the Innovators Awards program and webcasts.
